Semiconductor device and method for manufacturing a semiconductor device

US9570433B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Markus Zundel · Egmating, DE
• Vanessa Capodieci · Munich, DE
• Markus Dinkel · Unterhaching, DE
• Uwe Schmalzbauer · Neubiberg, DE

Key dates

• Filing date: Sep 21, 2015
• Grant date: Feb 14, 2017
• Expiry date: Sep 21, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a semiconductor substrate including a main surface with a polygonal geometry and a main electric circuit manufactured within a main region on the semiconductor substrate. The main electric circuit is operable to perform an electric main function. The main region extends over the main surface of the semiconductor substrate leaving open at least one corner area at a corner of the polygonal geometry of the main surface of the semiconductor substrate. The corner area extends at least 300 μm along the edges of the semiconductor substrate beginning at the corner.