Method for manufacturing semiconductor device
US9570464B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2016 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Mar 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a method for manufacturing a semiconductor device includes forming a first metal nitride film on a side surface of a hole extending in a stacking direction in a stacked body. The method includes forming a second metal nitride film on upper and lower surfaces of second layers and a side surface of the first metal nitride film. The method includes forming metal layers in first air gaps inside the second metal nitride film. The method includes removing the second layers and forming second air gaps between the metal layers. The method includes removing the first metal nitride film exposed to the second air gaps and dividing the first metal nitride film in the stacking direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.