Patent · US Active

Dielectric grid bottom profile for light focusing

US9570493B2 · kind B2 · utility

9Cited by
4References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 16, 2015
Grant dateFeb 14, 2017
Priority date
Expiry dateApr 16, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/8067

Abstract

A back side illumination (BSI) image sensor with a dielectric grid opening having a curved lower surface is provided. A pixel sensor is arranged within a semiconductor substrate. A metallic grid is arranged over the pixel sensor and defines a sidewall of a metallic grid opening. A dielectric grid is arranged over the metallic grid and defines a sidewall of the dielectric grid opening. A capping layer is arranged over the metallic grid, and defines the curved lower surface of the dielectric grid opening. A method for manufacturing the BSI image sensor is also provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.