High electron mobility transistor
US9570597B2 · kind B2 · utility
1Cited by
3References
13Claims
0Family size
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Key dates
| Filing date | Jan 2, 2013 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Jan 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer that induces a two-dimensional electron gas (2DEG) in a channel layer, a source electrode and a drain electrode that are at sides of the channel supply layer, a depletion-forming layer that is on the channel supply layer and contacts the source electrode, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulating layer. The depletion-forming layer forms a depletion region in the 2DEG.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.