Semiconductor device for emitting frequency-adjusted infrared light

US9570659B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Alfons Dehe · Reutlingen, DE
• Stefan Kolb · Unterschleißheim, DE
• Horst Theuss · Wenzenbach, DE
• Dirk Meinhold · Dresden, DE

Key dates

• Filing date: Oct 14, 2013
• Grant date: Feb 14, 2017
• Expiry date: Oct 14, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/855

Abstract

A semiconductor device for emitting frequency-adjusted infrared light includes a lateral emitter structure and a lateral filter structure. The lateral emitter structure is configured to emit infrared light with an emitter frequency distribution. Further, the lateral filter structure is configured to filter the infrared light emitted by the lateral emitter structure so that frequency-adjusted infrared light is provided with an adjusted frequency distribution. The frequency range of the adjusted frequency distribution is narrower than a frequency range of the emitter frequency distribution. Further, a lateral air gap is located between the lateral emitter structure and the lateral filter structure.