Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects
US9570683B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2016 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Feb 17, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Providing for three-dimensional memory cells having enhanced electric field characteristics and/or memory cells located at broken interconnects is described herein. By way of example, a two-terminal memory cell can be constructed from a layered stack of materials, where respective layers are arranged along a direction that forms a non-zero angle to a normal direction of a substrate surface upon which the layered stack of materials is constructed. In some aspects, the direction can be orthogonal to or substantially orthogonal to the normal direction. In other aspects, the direction can be less than orthogonal to the normal direction. Where an internal angle of the memory cell forms a non-orthogonal angle, an enhanced electric field or current density can result, providing improved switching times and memory performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.