Patent · US Active

Three dimensional semiconductor memory device

US9576664B2 · kind B2 · utility

3Cited by

3References

18Claims

0Family size

Assignee

SK hynix Inc. · KR

Inventors

Chang Man SON · Seongju-eup, KR
Go Hyun LEE · Seojong-myeon, KR
Sung Lae OH · Icheon-si, KR

Key dates

Filing date	Dec 4, 2013
Grant date	Feb 21, 2017
Priority date	—
Expiry date	Dec 4, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10B43/40
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A semiconductor memory device may include a string including at least one drain select transistor, a plurality of first memory cells, a first connection element, a plurality of second memory cells, a second connection element, a plurality of third memory cells, and at least one source select transistor, wherein the at least one drain select transistor, the plurality of first memory cells, the plurality of second memory cells, the plurality of third memory cells, and the at least one source select transistor connected serially via the first connection element and the second connection element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.