Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core

US9576844B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Rudolf Berger · Munich, DE
• Hermann Gruber · Leverkusen, DE
• Wolfgang Lehnert · Lintach, DE
• Guenther Ruhl · Regensburg, DE
• Raimund Foerg · Straubing, DE
• Anton Mauder · Kolbermoor, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Karsten Kellermann · Altdorf, DE
• Michael Sommer · Raubling, DE
• Christian Rottmair · Erlangen, DE
• Roland Rupp · Achern, DE

Key dates

• Filing date: Dec 8, 2015
• Grant date: Feb 21, 2017
• Expiry date: Dec 8, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A composite wafer is manufactured by providing a carrier wafer including graphite and a protective layer, forming a bonding layer, and bonding the carrier wafer to a semiconductor wafer through the bonding layer.