Contact area structure and method for manufacturing the same
US9576901B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2016 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Feb 25, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5329
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes forming a contact area opening in a dielectric structure, depositing a contact area metal in the contact area opening, forming a metal cap layer on the contact area metal, forming one or more dielectric layers on the metal cap layer, forming one or more hard mask layers on the one or more dielectric layers, forming a metallization opening through the one or more dielectric and hard mask layers, wherein the metallization opening exposes the metal cap layer, removing the one or more hard mask layers, and forming a metallization layer in the metallization opening on the metal cap layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.