Integrated circuits with varying gate structures and fabrication methods
US9576952B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2014 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | May 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
Abstract
Integrated circuits and fabrication methods are provided. The integrated circuit includes: a varying gate structure disposed over a substrate structure, the varying gate structure including a first gate stack in a first region of the substrate structure, and a second gate stack in a second region of the substrate structure; a first field-effect transistor in the first region, the first field-effect transistor including the first gate stack and having a first threshold voltage; and a second field-effect transistor in the second region, the second field-effect transistor including the second gate stack and having a second threshold voltage, where the first threshold voltage is different from the second threshold voltage. The methods include providing the varying gate structure, the providing including: sizing layer(s) of the varying gate structure with different thickness(es) in different region(s).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.