Integration of semiconductor epilayers on non-native substrates
US9577047B2 · kind B2 · utility
22Cited by
8References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2015 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Jul 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An article includes a support substrate bonded to heterostructure epitaxial layers that include one or more electronic devices. The support substrate has a bonding surface and the heterostructure epitaxial layers have a surface with the epitaxial growth direction of the heterostructure epitaxial layers towards the surface. The surface of the heterostructure epitaxial layers is bonded at the bonding surface of the support substrate by ion exchange between the surface of the heterostructure epitaxial layers and the bonding surface of the support substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.