Dual metal gate electrode for reducing threshold voltage
US9577062B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 27, 2014 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Dec 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gate conductor material stack including, from bottom to top, of a first metallic nitride, a second metallic nitride, and a conductive material portion is employed for a transistor in combination with a gate dielectric including a high dielectric constant (high-k) dielectric material. The second metallic nitride includes a nitride of an aluminum-containing metallic alloy of at least two elemental metals, and can be selected from TaAlN, TiAlN, and WAlN. The second metallic nitride can provide a function of oxygen scavenging from the high-k gate dielectric and/or prevent diffusion of atoms from the conductive material portion. The gate conductor material stack can enable a reduced inversion thickness and/or a reduced magnitude for a linear threshold voltage for p-type field effect transistors compared with a gate electrode employing a single metallic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.