Magnetoresistance effect element and magnetic memory
US9577182B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2014 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Oct 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance effect element and a magnetic memory having thermal stability expressed by a thermal stability factor of 70 or more even with a fine junction size. The magnetoresistance effect element includes a first magnetic layer of an invariable magnetization direction forming a reference layer, a second magnetic layer of a variable magnetization direction forming a recording layer, and a first non-magnetic layer disposed between the first and second magnetic layers in a thickness direction of the first and second magnetic layers. At least one of the first and second magnetic layers has the following relationship between D (nm) and t (nm): D<0.9t+13, where D is a junction size corresponding to the length of a longest straight line on an end surface perpendicular to the thickness direction, and t is a layer thickness. The junction size is 30 nm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.