Patent · US Active

Low temperature silicon nitride films using remote plasma CVD technology

US9583333B2 · kind B2 · utility

322Cited by

2References

12Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Amit Chatterjee · Redmond, US
Abhijit Basu Mallick · Palo Alto, US
Nitin K. Ingle · San Jose, US

Key dates

Filing date	Oct 22, 2014
Grant date	Feb 28, 2017
Priority date	—
Expiry date	Dec 18, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02274
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Embodiments of the present invention generally provide methods for forming a silicon nitride layer on a substrate. In one embodiment, a method of forming a silicon nitride layer using remote plasma chemical vapor deposition (CVD) at a temperature that is less than 300 degrees Celsius is disclosed. The precursors for the remote plasma CVD process include tris(dimethylamino)silane (TRIS), dichlorosilane (DCS), trisilylamine (TSA), bis-t-butylaminosilane (BTBAS), hexachlorodisilane (HCDS) or hexamethylcyclotrisilazane (HMCTZ).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.