Process to enable ferroelectric layers on large area substrates
US9583336B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2016 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Feb 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68742
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A microelectronic device with a ferroelectric layer is formed using an MOCVD tool. A substrate is disposed on a susceptor heated to 600° C. to 650° C. A first carrier gas is flowed into a manifold to combine with a plurality of metal organic precursors. The first carrier gas, the metal organic precursors, and a second carrier gas, are flowed through a vaporizer into a chamber of the MOCVD tool, over the substrate. A ratio of a flow rate of the first carrier gas to a flow rate of the metal organic precursors is 250 sccm/milliliter/minute to 500 sccm/milliliter/minute. A ratio of a flow rate of the second carrier gas to a flow rate of the metal organic precursors is 700 sccm/milliliter/minute to 1500 sccm/milliliter/minute. An oxidizing gas is flowed into the chamber over the substrate. The metal organic precursors and the oxidizing gas react to form the ferroelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.