Semipolar nitride semiconductor structure and method of manufacturing the same
US9583340B2 · kind B2 · utility
3Cited by
52References
12Claims
0Family size
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Key dates
| Filing date | Nov 4, 2014 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Nov 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a semipolar nitride semiconductor structure and a method of manufacturing the same. The semipolar nitride semiconductor structure includes a silicon substrate having an Si(11k) surface satisfying 7≦k≦13; and a nitride semiconductor layer formed on the silicon substrate. The nitride semiconductor layer has a semipolar characteristic in which a polarization field is approximately 0.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.