Method of forming non-continuous line pattern and non-continuous line pattern structure
US9583343B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2015 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Jun 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.