Hardmask composition and method of forming pattern by using the hardmask composition
US9583358B2 · kind B2 · utility
14Cited by
9References
8Claims
0Family size
Assignee
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Key dates
| Filing date | May 29, 2015 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | May 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A hardmask composition may include a solvent and a 2-dimensional carbon nanostructure containing about 0.01 atom % to about 40 atom % of oxygen or a 2-dimensional carbon nanostructure precursor thereof. A content of oxygen in the 2-dimensional carbon nanostructure precursor may be lower than about 0.01 atom % or greater than about 40 atom %. The hardmask composition may be used to form a fine pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.