Patent · US Active

Semiconductor device

US9583413B2 · kind B2 · utility

0Cited by

5References

11Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Ivan Nikitin · Regensburg, DE
Joachim Mahler · Regensburg, DE
Thomas Behrens · Madison, US

Key dates

Filing date	Feb 13, 2009
Grant date	Feb 28, 2017
Priority date	—
Expiry date	Jan 13, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a first chip coupled to an electrical insulator, and a sintered heat conducting layer disposed between the electrical insulator and the first chip.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.