Semiconductor device having metallic source and drain regions
US9583487B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2011 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Apr 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices having metallic source and drain regions are described. For example, a semiconductor device includes a gate electrode stack disposed above a semiconducting channel region of a substrate. Metallic source and drain regions are disposed above the substrate, on either side of the semiconducting channel region. Each of the metallic source and drain regions has a profile. A first semiconducting out-diffusion region is disposed in the substrate, between the semiconducting channel region and the metallic source region, and conformal with the profile of the metallic source region. A second semiconducting out-diffusion region is disposed in the substrate, between the semiconducting channel region and the metallic drain region, and conformal with the profile of the metallic drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.