Capacitor having a top compressive polycrystalline plate

US9583559B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Wolfgang Lehnert · Lintach, DE
• Stefan Pompl · Landshut, DE
• Markus Meyer · Annaberg-Buchholz, DE

Key dates

• Filing date: Mar 23, 2015
• Grant date: Feb 28, 2017
• Expiry date: Mar 23, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In one embodiment a method of forming a compressive polycrystalline semiconductive material layer is disclosed. The method comprises forming a polycrystalline semiconductive seed layer over a substrate and forming a silicon layer by depositing silicon directly on the polycrystalline silicon seed layer under amorphous process conditions at a temperature below 600 C.