Power semiconductor device of stripe cell geometry
US9583560B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2015 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Mar 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
Abstract
A power semiconductor device of stripe cell geometry including a substrate, a plurality of striped power semiconductor units, and a guard ring structure is provided. The substrate has an active area and a termination area surrounding the active area defined thereon. The striped semiconductor unit includes a striped gate conductive structure. The striped semiconductor units are located in the active area. The guard ring structure is located in the termination area and includes at least a ring-shaped conductive structure surrounding the striped power semiconductor units. The ring-shaped conductive structure and the striped gate conductive structures are formed on the same conductive layer, and at least one of the striped gate conductive structures is separated from the nearby ring-shaped conductive structure and electrically connected to the nearby ring-shaped conductive structure through the gate metal pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.