Method of making high electron mobility transistor structure
US9583588B2 · kind B2 · utility
1Cited by
1References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 5, 2014 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Nov 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes epitaxially growing a gallium nitride (GaN) layer over a silicon substrate. The method further includes epitaxially growing a donor-supply layer over the GaN layer. The method further includes forming a source and a drain on the donor-supply layer. The method further includes forming a gate structure between the source and the drain on the donor-supply layer. The method further includes plasma etching a portion of a drift region of the donor-supply layer to a depth of less than 60% of a donor-supply layer thickness. The method further includes depositing a dielectric layer over the donor-supply layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.