Semiconductor device and method of forming the same
US9583617B2 · kind B2 · utility
4Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2015 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Jun 11, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device including a substrate, an insulating layer, a conductive layer and at least one spacer. The substrate has at least two shallow trenches therein. The conductive layer is disposed on the substrate between the shallow trenches. The insulating layer is disposed between the substrate and the conductive layer. The at least one spacer is disposed on one sidewall of the conductive layer and fills up each shallow trench. A method of forming a semiconductor device is further provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.