Ge/Si avalanche photodiode with integrated heater and fabrication method thereof

US9583664B2 · kind B2 · utility

Assignee

• SiFotonics Technologies Co., Ltd. · KY

Inventors

• Tuo Shi · 安丰镇, CN
• Pengfei Cai · Beijing, CN
• Liangbo Wang · Beijing, CN
• Nai Zhang · Fremont, US
• Wang Chen · Beijing, CN
• Su Li · Beijing, CN
• Ching-yin Hong · Lexington, US
• Mengyuan Huang · Cupertino, US
• Dong Pan · Taipei, TW

Key dates

• Filing date: Feb 3, 2016
• Grant date: Feb 28, 2017
• Expiry date: Feb 3, 2036

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

Various embodiments of a novel structure of a Ge/Si avalanche photodiode with an integrated heater, as well as a fabrication method thereof, are provided. In one aspect, a doped region is formed either on the top silicon layer or the silicon substrate layer to function as a resistor. When the environmental temperature decreases to a certain point, a temperature control loop will be automatically triggered and a proper bias is applied along the heater, thus the temperature of the junction region of a Ge/Si avalanche photodiode is kept within an optimized range to maintain high sensitivity of the avalanche photodiode and low bit-error rate level.