Low warpage wafer bonding through use of slotted substrates
US9583676B2 · kind B2 · utility
1Cited by
2References
19Claims
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Key dates
| Filing date | Oct 5, 2012 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Oct 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a wafer bonding process, one or both of two wafer substrates are scored prior to bonding. By creating slots in the substrate, the wafer's characteristics during bonding are similar to that of a thinner wafer, thereby reducing potential warpage due to differences in CTE characteristics associated with each of the wafers. Preferably, the slots are created consistent with the singulation/dicing pattern, so that the slots will not be present in the singulated packages, thereby retaining the structural characteristics of the full-thickness substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.