Sn vapor EUV LLP source system for EUV lithography
US9585236B2 · kind B2 · utility
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10References
19Claims
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Key dates
| Filing date | Apr 24, 2014 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Jul 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05G2/0094
- WIPO fieldMedical technology
- WIPO sectorInstruments
Abstract
A Sn vapor EUV LLP source system for EUV lithography is disclosed. The system generates a Sn vapor column from a supply of Sn liquid. The Sn column has a Sn-atom density of <1019 atoms/cm3 and travels at or near sonic speeds. The system also has a Sn vapor condenser arranged to receive the Sn vapor column and condense the Sn vapor to form recycled Sn liquid. A pulse laser irradiates a section of the Sn vapor column. Each pulse generates an under-dense Sn plasma having an electron density of <1019 electrons/cm3, thereby allowing the under-dense Sn plasma substantially isotropically emit EUV radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.