Etching method for forming a carrier having inward side walls in particular for confining a droplet for capillary self-assembly
US9586207B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 8, 2014 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Jul 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/95146
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for capillary self-assembly of a plate and a carrier, including: forming an etching mask on a region of a substrate; reactive-ion etching the substrate, the etching using a series of cycles each including isotropic etching followed by surface passivation, wherein a duration of the isotropic etching for each cycle increases from one cycle to another, a ratio between durations of the passivation and etching of each cycle is lower than a ratio for carrying out a vertical anisotropic etching to form a carrier having an upper surface defined by the region and side walls defining an acute angle with the upper surface; removing the etching mask; placing a droplet on the upper surface of the carrier; and placing the plate on the droplet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.