Cleaning liquid composition, method for cleaning semiconductor element, and method for manufacturing semiconductor element
US9587208B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2013 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Jun 6, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The object is to provide a cleaning liquid composition, which suppresses damage to a low-dielectric constant interlayer dielectric film, a wiring material, such as copper or a copper alloy, a barrier metal, and a barrier dielectric film and removes an organosiloxane thin film, a dry etching residue and a photoresist on a treatment target surface in a process for producing a semiconductor device, as well as a cleaning method for a semiconductor device using the same, and a production process for a semiconductor device using the same. A cleaning liquid composition for producing a semiconductor device according to the invention contains 0.05 to 25% by weight of a quaternary ammonium hydroxide, 0.001 to 1.0% by weight of potassium hydroxide, 5 to 85% by weight of a water-soluble organic solvent, and 0.0005 to 10% by weight of pyrazoles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.