Cointegration of optical waveguides, microfluidics, and electronics on sapphire substrates
US9588289B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2016 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Jan 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/10
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of forming a semiconductor structure includes forming a first optical waveguide and a second optical waveguide on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate. The method further includes etching a portion of the cladding layer to form a microfluidic channel therein and forming a capping layer on a top surface of the first optical waveguide, the second optical waveguide and the microfluidic channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.