Patent · US Active

Temperature compensated semiconductor device

US9589599B2 · kind B2 · utility

2Cited by
9References
14Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 29, 2015
Grant dateMar 7, 2017
Priority date
Expiry dateJul 29, 2035

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C7/20
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

An integrated circuit includes a first signal generation unit suitable for generating a first enable signal which is activated during an initial setting period; a second signal generation unit suitable for generating a second enable signal which is activated in response to a command for performing a preset operation, after the initial setting period; and a temperature code generation unit suitable for generating temperature codes in response to activation of the first and second enable signals.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.