Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy
US9589619B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2015 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Feb 9, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/005
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus relating to spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy are disclosed. In an example, disclosed is a three-terminal magnetic tunnel junction (MTJ) storage element that is programmed via a combination of voltage-controlled magnetic anisotropy (VCMA) and spin-orbit torque (SOT) techniques. Also disclosed is a memory controller configured to program the three-terminal MTJ storage element via VCMA and SOT techniques. The disclosed devices improve efficiency over conventional devices by using less write energy, while having a design that is simpler and more scalable than conventional devices. The disclosed devices also have increased thermal stability without increasing required switching current, as critical switching current between states is essentially the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.