Semiconductor device with a stoichiometric gradient
US9589635B2 · kind B2 · utility
5Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2014 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Apr 14, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A device that includes a semiconductor device and a contact electrode with a first side that is opposite a second side. The first side abuts the semiconductor device. The contact electrode has a stoichiometry that varies from the first side to the second side. The stoichiometry of the first side inhibits the diffusion of metal from the semiconductor device into the first contact electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.