Damage free enhancement of dopant diffusion into a substrate
US9589802B1 · kind B1 · utility
23Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2015 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Dec 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of doping a substrate. The method may include implanting a dose of a helium species into the substrate through a surface of the substrate at an implant temperature of 300° C. or greater. The method may further include depositing a doping layer containing a dopant on the surface of the substrate, and annealing the substrate at an anneal temperature, the anneal temperature being greater than the implant temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.