Reverse conducting IGBT
US9589952B2 · kind B2 · utility
2Cited by
1References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 11, 2016 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Apr 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A reverse conducting IGBT is provided with a trench gate member that is provided in an IGBT region and has a lattice-pattern layout, and a trench member that is provided in a diode region and has a stripe-pattern layout. The diode region of the semiconductor substrate includes an anode region of a first conductive type, a drift region of a second conductive type and a barrier region of the second conductive type. The barrier region is electrically connected to a top surface electrode via a pillar member that extends from a top surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.