TFT substrate having three parallel capacitors

US9589995B2 · kind B2 · utility

Assignee

• TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED · CN

Inventors

• Longqiang Shi · Nanhu, CN
• Chihyuan Tseng · Tangxia, CN
• Wenhui Li · Nanhu, CN
• Yutong HU · Tangxia, CN
• Hejing Zhang · Tangxia, CN
• Xiaowen Lv · Nanhu, CN
• Chihyu Su · Tangxia, CN

Key dates

• Filing date: Aug 15, 2014
• Grant date: Mar 7, 2017
• Expiry date: Apr 25, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K59/1216

Abstract

Disclosed are a method for manufacturing a TFT substrate having storage capacitors and the TFT substrate. The method includes: (1) forming a gate terminal and a first metal electrode; (2) forming a gate insulation layer and a gate insulation layer through-hole; (3) forming an oxide semiconductor layer; (4) subjecting a portion of the oxide semiconductor layer to N-type heavy doping to form a first conductor electrode thereby constituting a first storage capacitor; (5) forming an etch stop layer and a first etch stop layer through-hole; (6) forming source/drain terminals and a second metal electrode, thereby constituting a second storage capacitor connected in parallel to the first capacitor; (7) forming a protection layer, a protection layer through-hole, and a second etch stop layer through-hole; and (8) forming a pixel electrode and a second conductor electrode, thereby constituting a third storage capacitor connected in parallel to the second capacitor.