High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors
US9590026B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2015 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Jun 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53242
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.