Hydrogenated amorphous silicon dielectric for superconducting devices
US9593414B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 31, 2013 |
| Grant date | Mar 14, 2017 |
| Priority date | — |
| Expiry date | Jul 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Amorphous silicon (a-Si) is hydrogenated for use as a dielectric (e.g., an interlayer dielectric) for superconducting electronics. A hydrogenated a-Si layer is formed on a substrate by CVD or sputtering. The hydrogen may be integrated during or after the a-Si deposition. After the layer is formed, it is first annealed in an environment of high hydrogen chemical potential and subsequently annealed in an environment of low hydrogen chemical potential. Optionally, the a-Si (or an H-permeable overlayer, if added) may be capped with a hydrogen barrier before removing the substrate from the environment of low hydrogen chemical potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.