Method for forming multilayer film including oxide semiconductor film and method for manufacturing semiconductor device
US9595435B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2013 |
| Grant date | Mar 14, 2017 |
| Priority date | — |
| Expiry date | Jan 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To form an oxide semiconductor film with a low density of localized levels. To improve electric characteristics of a semiconductor device including the oxide semiconductor. After oxygen is added to an oxide film containing In or Ga in contact with an oxide semiconductor film functioning as a channel, heat treatment is performed to make oxygen in the oxide film containing In or Ga transfer to the oxide semiconductor film functioning as a channel, so that the amount of oxygen vacancies in the oxide semiconductor film is reduced. Further, an oxide film containing In or Ga is formed, oxygen is added to the oxide film, an oxide semiconductor film is formed over the oxide film, and then heat treatment is performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.