Method of forming a BICMOS semiconductor chip that increases the betas of the bipolar transistors
US9595480B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Dec 4, 2014 |
| Grant date | Mar 14, 2017 |
| Priority date | — |
| Expiry date | Dec 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/403
Abstract
The betas of the bipolar transistors in a BiCMOS semiconductor structure are increased by forming the emitters of the bipolar transistors with two implants: a source-drain implant that forms a first emitter region at the same time that the source and drain regions are formed, and an additional implant that forms a second emitter region at the same time that another region is formed. The additional implant has an implant energy that is greater than the implant energy of the source-drain implant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.