Aluminum oxide landing layer for conductive channels for a three dimensional circuit device

US9595531B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Hongbin Zhu · Boise, US
• Gordon A. Haller · Boise, US
• Fatma Arzum Simsek-Ege · Boise, US

Key dates

• Filing date: Jul 11, 2014
• Grant date: Mar 14, 2017
• Expiry date: Jul 11, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B41/60

Abstract

A multitier stack of memory cells having an aluminum oxide (AlOx) layer as a noble HiK layer to provide etch stop selectivity. Each tier of the stack includes a memory cell device. The circuit includes a source gate select polycrystalline (SGS poly) layer adjacent the multitier stack of memory cells, wherein the SGS poly layer is to provide a gate select signal for the memory cells of the multitier stack. The circuit also includes a conductive source layer to provide a source conductor for a channel for the tiers of the stack. The AlOx layer is disposed between the source layer and the SGS poly layer and provides both dry etch selectivity and wet etch selectivity for creating a channel to electrically couple the memory cells to the source layer.