Vertical III-nitride thin-film power diode
US9595616B1 · kind B1 · utility
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26Claims
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Key dates
| Filing date | Dec 2, 2015 |
| Grant date | Mar 14, 2017 |
| Priority date | — |
| Expiry date | Dec 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.