Method for producing GaN-based crystal and semiconductor device
US9595632B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 23, 2015 |
| Grant date | Mar 14, 2017 |
| Priority date | — |
| Expiry date | Feb 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a GaN-based crystal includes forming a Zinc-blend type BP crystal layer on a Si substrate; forming an In-containing layer, on the BP crystal layer, with such a thickness as to keep the Zinc-blend type structure; and forming a Zinc-blend type GaN-based crystal layer on the In-containing layer. The In-containing layer is a metallic In layer having a thickness of 4 atom layers or less, an InGaN layer having a thickness of 2 nm or less, an InAl mixture layer having a thickness of 4 atom layers or less and containing Al at 10% or less, or an AlInGaN layer having a thickness of 2 nm or less and containing Al at 10% or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.