Suzuka Nishimura
5Patents
2h-index
4Co-inventors
40Inventor score
Filing activity: Mar 17, 1999 → Dec 4, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6069021A | Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer | Electricity | 105 | Expired |
| US6194744A | Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer | Electricity | 17 | Expired |
| US7696690B2 | Short-wavelength light-emitting element arranged in a container with a window having a window board formed of a calcium fluoride crystals | Electricity | 2 | Active |
| US9595632B2 | Method for producing GaN-based crystal and semiconductor device | Electricity | 0 | Active |
| US9755111B2 | Active region containing nanodots (also referred to as “quantum dots”) in mother crystal formed of zinc blende-type (also referred to as “cubic crystal-type”) AlyInxGal-y-xN Crystal (y[[□]][≧] 0, x > 0) grown on Si substrate, and light emitting device using the same (LED and LD) | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.