Low overdrive probes with high overdrive substrate
US9599665B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2013 |
| Grant date | Mar 21, 2017 |
| Priority date | — |
| Expiry date | Jan 21, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2891
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for testing a semiconductor device is disclosed. The method comprises positioning a probe card comprising a plurality of probes above the semiconductor device and moving the probe card in a vertical direction towards the semiconductor device. The plurality of probes are moving in a vertical direction towards a plurality of electrical structures of the semiconductor device until each probe of the plurality of probes has made mechanical contact with a corresponding electrical structure of the plurality of electrical structures with a minimum quantity of force. The each probe of the plurality of probes absorbs a portion of vertical overdrive after contacting their corresponding electrical structures. The probe card absorbs any remaining vertical overdrive. The vertical overdrive is a continuing vertical movement of the plurality of probes after a first probe of the plurality of probes mechanically contacts a first corresponding electrical structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.