Patent · US Active

Method for manufacturing a nanolithography mask

US9599890B2 · kind B2 · utility

0Cited by

5References

21Claims

0Family size

Assignees

ARKEMA FRANCE · FR
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Christophe Navarro · Lahonce, FR
Maxime Argoud · Grenoble, FR
Xavier Chevalier · Grenoble, FR
Raluca Tiron · Saint-Égrève, FR
Ahmed GHARBI · Grenoble, FR

Key dates

Filing date	Dec 16, 2013
Grant date	Mar 21, 2017
Priority date	—
Expiry date	Dec 16, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/0274
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The invention concerns a manufacturing method for nanolithography masks from a PS-b-PMMA block copolymer film deposited on a surface to be etched, said copolymer film comprising PMMA nanodomains orientated perpendicularly to the surface to be etched, said method being characterized in that it comprises the following steps:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.