Composition for pattern formation, and pattern-forming method
US9599892B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Mar 25, 2015 |
| Grant date | Mar 21, 2017 |
| Priority date | — |
| Expiry date | Mar 26, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08L53/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A composition for pattern formation includes a block copolymer and a solvent. The block copolymer includes a group including a reactive group on at least one end of a main chain of the block copolymer. A pattern-forming method includes providing a directed self-assembling film directly or indirectly on a substrate using the composition. The directed self-assembling film includes a phase separation structure which includes a plurality of phases. A part of the plurality of phases of the directed self-assembling film is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.