Method, apparatus, and system for global healing of stability-limited die through bias temperature instability
US9601187B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2016 |
| Grant date | Mar 21, 2017 |
| Priority date | — |
| Expiry date | Feb 18, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/04
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
We disclose methods, apparatus, and systems for improving semiconductor device yield and/or reliability through bias temperature instability (BTI). One device may comprise a plurality of cells of an array, wherein each of the cells comprises a pass gate and a latch; a plurality of word lines, wherein each word line controls access to each pass gate of a first number of cells; a word line driver electrically connected to each word line; and a control line configured to provide an operational write voltage or a first write voltage to each word line through the word line driver. By virtue of BTI, application of the first write voltage may lead to improved stability of data desired to be read from one or more cells of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.