Protruding contact for integrated chip
US9601409B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2014 |
| Grant date | Mar 21, 2017 |
| Priority date | — |
| Expiry date | Dec 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a method of forming a back-end-of-the-line metal contact that eliminates RC opens caused by metal dishing during chemical mechanical polishing. The method is performed by depositing a sacrificial UV/thermal decomposition layer (UTDL) above an inter-level dielectric (ILD) layer. A metal contact is formed that extend through the ILD layer and the sacrificial UTDL. A chemical mechanical polishing (CMP) process is performed to generate a planar surface comprising the sacrificial UTDL. The sacrificial UTDL is then removed through an ultraviolet exposure or a thermal anneal, so that the metal contact protrudes from the ILD layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.