Patent · US Active

Plasma etching and stealth dicing laser process

US9601437B2 · kind B2 · utility

6Cited by

1References

19Claims

0Family size

Assignee

NXP B.V. · NL

Inventors

Guido Albermann · Hamburg, DE
Sascha Moeller · Hamburg, DE
Thomas Rohleder · Hamburg, DE
Martin Lapke · Hamburg, DE
Hartmut Buenning · Norderstedt, DE

Key dates

Filing date	Sep 9, 2014
Grant date	Mar 21, 2017
Priority date	—
Expiry date	Sep 9, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Consistent with an example embodiment, a method for preparing integrated circuit (IC) device die from a wafer substrate having a front-side with active devices and a back-side, comprises mounting the front-side of the wafer onto protective foil. A laser is applied to saw lane areas on the backside of the wafer, at a first focus depth to define a modification zone; the modification zone defined at a pre-determined depth within active device boundaries and the active device boundaries defined by the saw lane areas. The protective foil is stretched to separate IC device die from one another and expose active device side-walls. With dry-etching of the active device side-walls, the modification zone is substantially removed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.